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2N5551 transistor (NPN)
Bipolar transistor (Hfe=80-250; Pc=0.625W; Ic=0.6A)
- Type:
- Bipolar transistor
- Usage:
- NPN
- Power (Pcm):
- 0.625 W
- Collector current (Icm):
- 0.6 A
- Collector-base voltage (V(BR)cbo):
- 160 V
- Collector-emitter voltage (V(BR)ceo):
- 180 V
- Base-emitter voltage (V(BR)ebo):
- 6 V
- Collector cut-off current (Icbo):
- 50 nA
- Emitter cut-off current (Icbo):
- 50 nA
- Voltage base-emitter saturation:
- 1 V
- Voltage collector-emitter saturation:
- 0.2 V
- DC current gain:
- 80-250
- Frequency:
- 300 Mhz
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