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E13001 transistor (NPN)
Bipolar transistor (Hfe=10-70; Pc=0.75W; Ic=0.2A)
- Type:
- Bipolar transistor
- Usage:
- NPN
- Power (Pcm):
- 0,75 W
- Collector current (Icm):
- 0.2 A
- Collector-base voltage (V(BR)cbo):
- 600 V
- Collector-emitter voltage (V(BR)ceo):
- 400 V
- Base-emitter voltage (V(BR)ebo):
- 7 V
- Collector cut-off current (Icbo):
- 100 microA
- Emitter cut-off current (Icbo):
- 100 microA
- Voltage base-emitter saturation:
- 1.2 V
- Voltage collector-emitter saturation:
- 0.5 V
- DC current gain:
- 10-70
- Frequency:
- 8 MHz
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